JPH0514430B2 - - Google Patents

Info

Publication number
JPH0514430B2
JPH0514430B2 JP56081416A JP8141681A JPH0514430B2 JP H0514430 B2 JPH0514430 B2 JP H0514430B2 JP 56081416 A JP56081416 A JP 56081416A JP 8141681 A JP8141681 A JP 8141681A JP H0514430 B2 JPH0514430 B2 JP H0514430B2
Authority
JP
Japan
Prior art keywords
polysilicon
single crystal
isolation
silicon single
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56081416A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57196579A (en
Inventor
Masao Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56081416A priority Critical patent/JPS57196579A/ja
Publication of JPS57196579A publication Critical patent/JPS57196579A/ja
Publication of JPH0514430B2 publication Critical patent/JPH0514430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Element Separation (AREA)
JP56081416A 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof Granted JPS57196579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56081416A JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56081416A JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57196579A JPS57196579A (en) 1982-12-02
JPH0514430B2 true JPH0514430B2 (en]) 1993-02-25

Family

ID=13745737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56081416A Granted JPS57196579A (en) 1981-05-28 1981-05-28 Sos/mos transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57196579A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184567A (ja) * 1983-04-05 1984-10-19 Nec Corp 透明基板上の半導体デバイスの製造方法
JPH05166919A (ja) * 1991-12-18 1993-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5229157A (en) * 1975-09-01 1977-03-04 Nippon Telegr & Teleph Corp <Ntt> Timer circuit
JPS5816619B2 (ja) * 1978-05-25 1983-04-01 工業技術院長 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57196579A (en) 1982-12-02

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